蓝宝石
蓝宝石单晶（Sapphire,又称白宝石，分子式为Al2O3）有着很好的热特性，极好的电气 特性和介电特性，并且防化学腐蚀，它耐高温，导热好，硬度高，透红外，化学稳定性好。
用途：
广泛用于工业、国防和科研的多个领域（如耐高温红外窗口等）。同时它也是一种用途广泛的单晶基片材料，是当前蓝、紫、白光发光二极管（LED）和蓝光激光器（LD）工业的首选基片（需首先在蓝宝石基片上外延氮化镓薄膜），也是重要的超导薄膜基片。
锭・晶片 Ingot・Wafer
可以提供的蓝宝石材料
| Kyropoulos | HEM | CZ | CHES | VHGF | TGT | EFG | Bernoulli | |
| Max. Dia. | 300 | 380 | 150 | 250 | 100 | 200 | 120 | 45 |
| （mm） | ||||||||
| Max. Length | 450 | 240 | 200 | 150 | 100 | 170 | 800 | 110 |
| （mm） | ||||||||
| Orientation | A,C,R,M | A,C,R,M | A,C,R,M | A,C,R,M | A,C,R,M | A,C,R,M | A | A,C,R,M |
| ±5.0° | ||||||||
| Grade | Optical | Optical, | Optical, | Optical, | Optical, | Optical, | Mechanical | Mechanical |
| ,LED, | LED, | LED, | LED, | LED, | LED, | |||
| Mechanical | Mechanical | Mechanical | Mechanical | Mechanical | Mechanical |
蓝宝石特性数据 Sapphire characteristic data
| Properties | Units | Value | Remarks | |
| Basic | Chemical composition | Al2O3 | ||
| Crystal structure | Corundum | |||
| Lattice constant | nm | a=0.47588, c=1.2992 | Hexagonal crystals | |
| Mechanical | density | g/cm3 | 3.98 | |
| Hardness | Mohs | 9 | ||
| Knoop | 2,200 | parallel to the C-axis | ||
| 1,900 | perpendicular to the C-axis | |||
| Modulus of Elasticity | psi×106 | 68 | Young's | |
| Flexural Strength | kpsi | ～100 | ||
| Compressive Strength | kpsi | 425 | ||
| Poisson's Ratio | － | ～0.28 | Varies with Orientation | |
| Thermal | Melting point | ℃ | 2040 | |
| Coefficient of Thermal Expansion | ×10-6/℃ | 5.4 | parallel to the C-axis | |
| 4.3 | perpendicular to the C-axis | |||
| Thermal Conductivity | W/m･K | 46 | ||
| Specific Heat | J/g･K | 0.75 | ||
| Max Working Temp | ℃ | 2000 | ||
| Optical | Index of Refraction | 1.768 | Ordinary ray,No,C-axis | |
| 1.760 | Extraordinary ray,Ne,C-axis | |||
| Birefringence | 0.008 | No-Ne | ||
| Transmission Band | Wavelength of microns | 0.3-4.0 | >80% transmission | |
| Electrical | Dielectric Strength | ac volts/mil | 1200 | |
| Dielectric Constant | average | 11.5 | Parallel to the C-axis | |
| Volume Resistivity | Ω･cm | >1014 |
Epi Ready晶片 Epi Ready Wafer
提供2，4，6英寸的晶片作为GaN外延成长用底板使用。
也可以提供蓝宝石锭，请随时与我们联系。
Standard Spec of Sapphire Wafer for LED
| Φ2"Epi-Ready | Φ4"Epi-Ready | Φ6"Epi-Ready | |
| Diameter | 50.8±0.1mm | 100.0±0.1mm | 150.0±0.2mm |
| Thickness | 430±10μm | 650±15μm | 1300±25μm |
| Orientation | C-plane 0.2°to M-axis±0.1° | C-plane 0.2°to M-axis±0.1° | C-plane 0.2°to M-axis±0.1° |
| C-plane 0°to A-axis±0.1° | C-plane 0°to A-axis±0.1° | C-plane 0°to A-axis±0.1° | |
| Orientation flat length | 16.0±1.0mm | 30.0±1.0mm | 50.0±1.0mm |
| Primary flat location | A-axis±0.2° | A-axis±0.3° | A-axis±0.3° |
| Surface Roughness | Ra<0.2nm | Ra<0.2nm | Ra<0.2nm |
| Back side surface | 0.8-1.2μm | 0.8-1.2μm | 0.8-1.2μm |
| TTV | <10μm | <10μm | <15μm |
| BOW | <10μm | <10μm | <25μm |
精密加工品 Precision Parts
我们可以提供各种加工，包括切片，研磨，抛光，机加工。另外，极小零件加工，超精密加工也请随时与我们联系。
